OpenFieldDoctor of Engineering in Electronic Engineering & Semiconductor Devices
Doctoral research program investigating wide-bandgap semiconductors, gallium nitride (GaN) power devices, and nano-electronic fabrication in Kyushu's semiconductor hub.
Application checklist & requirements
These requirements reflect published university guidelines available at the last review. Review official department guidelines before submission.
- Academic degree / Prerequisites
- Master's degree in electronics, physics, or materials engineering
- English language proficiency
- TOEFL 75+ or IELTS 6.0+
- Standardized testing (GRE/GMAT)
- Not required
- Thesis / Research statement
- Summary of master's thesis and proposed semiconductor fabrication project
- Recommendation letters
- Two academic referee letters
How much will it cost? How much funding is available?
- Financial support / stipend
- FIT Graduate Research Fellowships (covering tuition + ¥50,000 JPY/month stipend)
- Application fee
- ¥30,000 JPY
- Tuition / joining costs
- ¥900,000 JPY/year (50% reduction applies to qualified international students)
Dates and verification
- Application deadline
- January 15, 2027 (Spring 2027 round)
- Last source review
- 2026-10-15
Important verification note
Facts reflect official Fukuoka Institute of Technology documentation reviewed 2026-10-15. Admissions, funding allocations, and eligibility thresholds are evaluated by the university.
Reviewed 2026-10-15 · Editorial standards · Report an issue