OpenFieldPh.D. in Wide Bandgap Power Semiconductors & Diamond Electronics Fellowship
Doctoral research program developing gallium nitride (GaN), silicon carbide (SiC), and diamond semiconductor transistors for ultra-high-efficiency electric grid inverters and EV power modules.
Application checklist & requirements
These requirements reflect published university guidelines available at the last review. Review official department guidelines before submission.
- Academic degree / Prerequisites
- Master of Science or Engineering in Electrical Engineering, Applied Physics, or Materials Science
- English language proficiency
- TOEFL 80 or IELTS 6.0
- Standardized testing (GRE/GMAT)
- Not required
- Thesis / Research statement
- Master's thesis manuscript and one published journal or conference paper
- Recommendation letters
- Two academic recommendation letters
How much will it cost? How much funding is available?
- Financial support / stipend
- JST SPRING Fellowship: ¥200,000 monthly living stipend + ¥350,000 annual research fund
- Application fee
- ¥30,000 application fee
- Tuition / joining costs
- Covered by doctoral fellowship scheme
Dates and verification
- Application deadline
- February 15, 2027
- Last source review
- 2026-10-15
Important verification note
Facts reflect official Yokohama National University documentation reviewed 2026-10-15. Admissions, funding allocations, and eligibility thresholds are evaluated by the university.
Reviewed 2026-10-15 · Editorial standards · Report an issue