Master of Engineering in Energy and Semiconductor Materials
Two-year English-taught graduate curriculum utilizing class-100 cleanrooms and molecular beam epitaxy to synthesize gallium nitride and silicon carbide power semiconductors.
Application checklist & requirements
These requirements reflect published university guidelines available at the last review. Review official department guidelines before submission.
- Academic degree / Prerequisites
- Bachelor of Science or Engineering in Physics, Materials Science, or Electrical Engineering with 3.2+ GPA
- English language proficiency
- IELTS Academic 6.5 or TOEFL 80
- Standardized testing (GRE/GMAT)
- Not required
- Thesis / Research statement
- Transcripts, resume, and study plan
- Recommendation letters
- Two academic reference letters
How much will it cost? How much funding is available?
- Financial support / stipend
- Generous monthly teaching assistantships (¥80,000/month) and subsidized on-campus housing
- Application fee
- ¥30,000
- Tuition / joining costs
- ¥600,000/year (subsidized by Toyota; reduced for international students)
Dates and verification
- Application deadline
- January 31, 2027
- Last source review
- 2026-10-15
Important verification note
Facts reflect official Toyota Technological Institute documentation reviewed 2026-10-15. Admissions, funding allocations, and eligibility thresholds are evaluated by the university.
Reviewed 2026-10-15 · Editorial standards · Report an issue