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Japan · PhD · Reviewed 2026-10-15

Doctor of Philosophy in Advanced Semiconductor Materials & Nanotechnology

Three-year doctoral program developing next-generation silicon carbide (SiC) and gallium nitride (GaN) power semiconductors for ultra-efficient electric vehicles and renewable energy grid inverters.

Official university details ↗Research checked, not sponsored

Application checklist & requirements

These requirements reflect published university guidelines available at the last review. Review official department guidelines before submission.

Academic degree / Prerequisites
Master's degree in Applied Physics, Materials Science, or Electrical Engineering.
English language proficiency
TOEFL iBT 80 or IELTS 6.5.
Standardized testing (GRE/GMAT)
Not required.
Thesis / Research statement
Doctoral dissertation research plan (5 pages), master's thesis, and list of publications.
Recommendation letters
Two letters of recommendation from physics or engineering professors.

How much will it cost? How much funding is available?

Financial support / stipend
JST SPRING Doctoral Fellowship providing ¥2,400,000 annual living stipend plus ¥500,000 research grant
Application fee
¥200,000 admission fee
Tuition / joining costs
¥850,000 per year (covered by fellowship waiver)

Dates and verification

Application deadline
January 15, 2027
Last source review
2026-10-15

Important verification note

Facts reflect official Kwansei Gakuin University - Kobe Sanda Campus documentation reviewed 2026-10-15. Admissions, funding allocations, and eligibility thresholds are evaluated by the university.

Reviewed 2026-10-15 · Editorial standards · Report an issue