Doctor of Philosophy in Advanced Semiconductor Materials & Nanotechnology
Three-year doctoral program developing next-generation silicon carbide (SiC) and gallium nitride (GaN) power semiconductors for ultra-efficient electric vehicles and renewable energy grid inverters.
Application checklist & requirements
These requirements reflect published university guidelines available at the last review. Review official department guidelines before submission.
- Academic degree / Prerequisites
- Master's degree in Applied Physics, Materials Science, or Electrical Engineering.
- English language proficiency
- TOEFL iBT 80 or IELTS 6.5.
- Standardized testing (GRE/GMAT)
- Not required.
- Thesis / Research statement
- Doctoral dissertation research plan (5 pages), master's thesis, and list of publications.
- Recommendation letters
- Two letters of recommendation from physics or engineering professors.
How much will it cost? How much funding is available?
- Financial support / stipend
- JST SPRING Doctoral Fellowship providing ¥2,400,000 annual living stipend plus ¥500,000 research grant
- Application fee
- ¥200,000 admission fee
- Tuition / joining costs
- ¥850,000 per year (covered by fellowship waiver)
Dates and verification
- Application deadline
- January 15, 2027
- Last source review
- 2026-10-15
Important verification note
Facts reflect official Kwansei Gakuin University - Kobe Sanda Campus documentation reviewed 2026-10-15. Admissions, funding allocations, and eligibility thresholds are evaluated by the university.
Reviewed 2026-10-15 · Editorial standards · Report an issue